IRF6616

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

5m Ω @ 19A, 10V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Drain Current-Max (Abs) (ID) :

19A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

19A Ta 106A Tc

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.005ohm

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ

Transistor Element Material :

SILICON

Terminal Position :

Dual

Avalanche Energy Rating (Eas) :

36 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

150A

Vgs (Max) :

±20V

Number of Terminations :

2

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Package / Case :

DirectFET™ Isometric MX

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3765pF @ 20V

Published :

2005

JESD-30 Code :

R-XDSO-G2

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

Power Dissipation-Max :

2.8W Ta 89W Tc

Terminal Form :

Gull wing

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Operating Mode :

ENHANCEMENT MODE