IRF6614

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Number of Elements :

1

Avalanche Energy Rating (Eas) :

22 mJ

Drain to Source Voltage (Vdss) :

40V

FET Type :

N-Channel

JESD-30 Code :

R-XBCC-N3

Terminal Position :

BOTTOM

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Published :

2006

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Power Dissipation-Max :

2.1W Ta 42W Tc

Mounting Type :

Surface Mount

Package / Case :

DirectFET™ Isometric ST

Rds On (Max) @ Id, Vgs :

8.3m Ω @ 12.7A, 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Current - Continuous Drain (Id) @ 25°C :

12.7A Ta 55A Tc

Drain Current-Max (Abs) (ID) :

12.7A

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.0083Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

2560pF @ 20V

Pulsed Drain Current-Max (IDM) :

102A

DS Breakdown Voltage-Min :

40V

Number of Terminations :

3

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Series :

HEXFET®

RoHS Status :

Non-RoHS Compliant