IRF6613TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Fall Time (Typ) :

4.9 ns

Voltage - Rated DC :

40V

Continuous Drain Current (ID) :

150mA

Rds On (Max) @ Id, Vgs :

3.4m Ω @ 23A, 10V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

200 mJ

Number of Pins :

5

Number of Terminations :

3

Series :

HEXFET®

Number of Elements :

1

JESD-30 Code :

R-XBCC-N3

Width :

5.0546mm

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 15V

Radiation Hardening :

No

Transistor Application :

SWITCHING

Power Dissipation :

89W

Time@Peak Reflow Temperature-Max (s) :

30

Additional Feature :

LOW CONDUCTION LOSS

Height :

508μm

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE

Current Rating :

23A

Rise Time :

47ns

Package / Case :

DirectFET™ Isometric MT

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Current - Continuous Drain (Id) @ 25°C :

23A Ta 150A Tc

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-40°C~150°C TJ

Turn On Delay Time :

18 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2006

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 4.5V

Turn-Off Delay Time :

27 ns

JESD-609 Code :

e1

Case Connection :

DRAIN

Length :

6.35mm

Terminal Position :

BOTTOM

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

2.8W Ta 89W Tc

Resistance :

3.4mOhm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2.25V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC