IRF6613TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

23A

Supplier Device Package :

DIRECTFET™ MT

Packaging :

Tape and Reel (TR)

Input Capacitance :

5.95nF

Mount :

Surface Mount

Recovery Time :

57 ns

Rds On Max :

3.4 mΩ

Length :

6.35mm

Drain to Source Resistance :

4.1mOhm

Min Operating Temperature :

-40°C

Rise Time :

47ns

Termination :

SMD/SMT

Package / Case :

DirectFET™ Isometric MT

FET Type :

N-Channel

Voltage - Rated DC :

40V

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

18A

Number of Elements :

1

RoHS Status :

RoHS Compliant

Resistance :

3.4mOhm

Drain to Source Breakdown Voltage :

40V

Rds On (Max) @ Id, Vgs :

3.4mOhm @ 23A, 10V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

5950pF @ 15V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Fall Time (Typ) :

4.9 ns

Number of Pins :

5

Threshold Voltage :

1.35V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

23A Ta 150A Tc

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Turn-Off Delay Time :

27 ns

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Surface Mount

Turn On Delay Time :

18 ns

Nominal Vgs :

1.35 V

Drain to Source Voltage (Vdss) :

40V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

506μm

Vgs (Max) :

±20V

Dual Supply Voltage :

40V

Power Dissipation :

89W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation-Max :

2.8W Ta 89W Tc

Width :

5.05mm

Published :

2006