IRF6612TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Fall Time (Typ) :

4.8 ns

Length :

6.35mm

Number of Pins :

5

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Terminal Position :

BOTTOM

Drain to Source Breakdown Voltage :

30V

Voltage - Rated DC :

30V

Turn On Delay Time :

15 ns

Nominal Vgs :

1.8 V

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

24A Ta 136A Tc

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Power Dissipation-Max :

2.8W Ta 89W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2006

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

DirectFET™ Isometric MX

Operating Mode :

ENHANCEMENT MODE

Rise Time :

52ns

Turn-Off Delay Time :

21 ns

Current Rating :

24A

Qualification Status :

Not Qualified

Mount :

Surface Mount

Height :

506μm

Power Dissipation :

89W

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

136mA

REACH SVHC :

No SVHC

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

30

Drain-source On Resistance-Max :

0.0033Ohm

Pulsed Drain Current-Max (IDM) :

190A

Lead Free :

Lead Free

JESD-609 Code :

e1

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 15V

Series :

HEXFET®

Number of Elements :

1

Terminal Form :

NO LEAD

JESD-30 Code :

R-XBCC-N3

Avalanche Energy Rating (Eas) :

37 mJ

Width :

5.05mm

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Rds On (Max) @ Id, Vgs :

3.3m Ω @ 24A, 10V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)