IRF6612TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Published :

2006

Series :

HEXFET®

Length :

6.35mm

Current - Continuous Drain (Id) @ 25°C :

24A Ta 136A Tc

Max Operating Temperature :

150°C

Continuous Drain Current (ID) :

19A

Rise Time :

52ns

Package / Case :

DirectFET™ Isometric MX

Mounting Type :

Surface Mount

Current Rating :

24A

Input Capacitance (Ciss) (Max) @ Vds :

3970pF @ 15V

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Turn-Off Delay Time :

21 ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 4.5V

Power Dissipation-Max :

2.8W Ta 89W Tc

Rds On (Max) @ Id, Vgs :

3.3mOhm @ 24A, 10V

Drain to Source Resistance :

4.4mOhm

Nominal Vgs :

1.8 V

Power Dissipation :

89W

Rds On Max :

3.3 mΩ

Lead Free :

Lead Free

Number of Pins :

5

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

4.8 ns

Width :

5.05mm

Height :

506μm

Input Capacitance :

3.97nF

Resistance :

3.3MOhm

Turn On Delay Time :

15 ns

REACH SVHC :

No SVHC

FET Type :

N-Channel

Min Operating Temperature :

-40°C

Drain to Source Breakdown Voltage :

30V

Supplier Device Package :

DIRECTFET™ MX

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Voltage - Rated DC :

30V

Mount :

Surface Mount