IRF6611TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Min Operating Temperature :

-40°C

Width :

5.05mm

Input Capacitance (Ciss) (Max) @ Vds :

4860pF @ 15V

REACH SVHC :

No SVHC

Voltage - Rated DC :

30V

Rds On Max :

2.6 mΩ

Drain to Source Voltage (Vdss) :

30V

Current Rating :

32A

Turn On Delay Time :

18 ns

Mounting Type :

Surface Mount

Mount :

Surface Mount

Turn-Off Delay Time :

24 ns

Max Operating Temperature :

150°C

Nominal Vgs :

2.25 V

Length :

6.35mm

Fall Time (Typ) :

6.5 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

22A

Drain to Source Breakdown Voltage :

30V

Rise Time :

57ns

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 4.5V

Package / Case :

DirectFET™ Isometric MX

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

32A Ta 150A Tc

Input Capacitance :

4.86nF

Power Dissipation-Max :

3.9W Ta 89W Tc

Published :

2006

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

5

Drain to Source Resistance :

3.4mOhm

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

RoHS Compliant

Height :

506μm

Series :

HEXFET®

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

2.6mOhm @ 27A, 10V

Vgs (Max) :

±20V

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Power Dissipation :

89W

Lead Free :

Lead Free

Supplier Device Package :

DIRECTFET™ MX