IRF6609TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

LOW CONDUCTION LOSS

Series :

HEXFET®

Power Dissipation-Max :

1.8W Ta 89W Tc

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

26 ns

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 10V

Current Rating :

31A

Current - Continuous Drain (Id) @ 25°C :

31A Ta 150A Tc

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2m Ω @ 31A, 10V

Mount :

Surface Mount

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Turn On Delay Time :

24 ns

RoHS Status :

RoHS Compliant

Height :

506μm

Continuous Drain Current (ID) :

150mA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Vgs (Max) :

±20V

Rise Time :

95ns

Drain to Source Breakdown Voltage :

20V

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Length :

6.35mm

Package / Case :

DirectFET™ Isometric MT

Terminal Position :

BOTTOM

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Power Dissipation :

89W

ECCN Code :

EAR99

Fall Time (Typ) :

9.8 ns

JESD-609 Code :

e1

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

240 mJ

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Voltage - Rated DC :

20V

Radiation Hardening :

No

Number of Pins :

5

Width :

5.05mm

Number of Elements :

1

FET Type :

N-Channel

Published :

2006

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-XBCC-N3

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.002Ohm

Lead Free :

Lead Free