IRF6609TR1PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

DirectFET™ Isometric MT

Height :

506μm

Number of Elements :

1

Power Dissipation :

1.8W

Current Rating :

31A

Threshold Voltage :

1.55V

REACH SVHC :

No SVHC

Number of Pins :

5

Input Capacitance :

6.29nF

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

31A Ta 150A Tc

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Turn-Off Delay Time :

26 ns

Supplier Device Package :

DIRECTFET™ MT

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Radiation Hardening :

No

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

20V

Drain to Source Breakdown Voltage :

20V

Vgs (Max) :

±20V

Dual Supply Voltage :

20V

Min Operating Temperature :

-40°C

Voltage - Rated DC :

20V

Termination :

SMD/SMT

Power Dissipation-Max :

1.8W Ta 89W Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Nominal Vgs :

2.45 V

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 10V

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

9.8 ns

Published :

2005

Continuous Drain Current (ID) :

25A

Mounting Type :

Surface Mount

Max Operating Temperature :

150°C

Length :

6.35mm

Rds On (Max) @ Id, Vgs :

2mOhm @ 31A, 10V

Rise Time :

95ns

Operating Temperature :

-40°C~150°C TJ

FET Type :

N-Channel

Lead Free :

Lead Free

Turn On Delay Time :

24 ns

Resistance :

2MOhm

Mount :

Surface Mount

Drain to Source Resistance :

2.6MOhm

Rds On Max :

2 mΩ

Width :

5.05mm