IRF6609

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

31A

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

9.8 ns

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.002Ohm

Current - Continuous Drain (Id) @ 25°C :

31A Ta 150A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Turn-Off Delay Time :

26 ns

Continuous Drain Current (ID) :

150A

Packaging :

Tape and Reel (TR)

Power Dissipation :

89W

Mount :

Surface Mount

Avalanche Energy Rating (Eas) :

240 mJ

Rise Time :

95ns

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Number of Terminations :

3

ECCN Code :

EAR99

Additional Feature :

LOW CONDUCTION LOSS

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

6290pF @ 10V

Published :

2005

Rds On (Max) @ Id, Vgs :

2m Ω @ 31A, 10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 4.5V

Voltage - Rated DC :

20V

JESD-30 Code :

R-XBCC-N3

Pulsed Drain Current-Max (IDM) :

250A

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

2.45V @ 250μA

Power Dissipation-Max :

1.8W Ta 89W Tc

Vgs (Max) :

±20V

JESD-609 Code :

e1

Transistor Application :

SWITCHING

Terminal Form :

NO LEAD

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Lead Free :

Lead Free

Package / Case :

DirectFET™ Isometric MT

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Qualification Status :

Not Qualified

Number of Pins :

7