IRF6604TR1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

11.5mOhm @ 12A, 7V

Turn-Off Delay Time :

18 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Nominal Vgs :

2.1 V

Rds On Max :

11.5 mΩ

Published :

2005

Lead Free :

Lead Free

Supplier Device Package :

DIRECTFET™ MQ

FET Type :

N-Channel

Radiation Hardening :

No

Dual Supply Voltage :

30V

Mount :

Surface Mount

REACH SVHC :

No SVHC

Package / Case :

DirectFET™ Isometric MQ

Max Operating Temperature :

150°C

Vgs(th) (Max) @ Id :

2.1V @ 250μA

Continuous Drain Current (ID) :

12A

RoHS Status :

RoHS Compliant

Drain to Source Breakdown Voltage :

30V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

30V

Reverse Recovery Time :

31 ns

Power Dissipation-Max :

2.3W Ta 42W Tc

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Resistance :

11.5mOhm

Threshold Voltage :

2.1V

Input Capacitance :

2.27nF

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 7V

Vgs (Max) :

±12V

Input Capacitance (Ciss) (Max) @ Vds :

2270pF @ 15V

Width :

5.05mm

Current - Continuous Drain (Id) @ 25°C :

12A Ta 49A Tc

Number of Pins :

7

Drain to Source Resistance :

11.5Ohm

Min Operating Temperature :

-40°C

Power Dissipation :

2.3W

Number of Elements :

1

Operating Temperature :

-40°C~150°C TJ