IRF644SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Nominal Vgs :

4 V

Peak Reflow Temperature (Cel) :

260

Resistance :

280mOhm

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

53 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

24ns

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

56A

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

280m Ω @ 8.4A, 10V

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Width :

9.65mm

Mount :

Surface Mount

Continuous Drain Current (ID) :

14A

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Packaging :

Tube

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Length :

10.67mm

Number of Pins :

3

Mounting Type :

Surface Mount

Height :

4.83mm

REACH SVHC :

Unknown

Pbfree Code :

yes

Weight :

1.437803g

Drain to Source Breakdown Voltage :

250V

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Power Dissipation-Max :

3.1W Ta 125W Tc

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Channels :

1

Power Dissipation :

3.1W

Pin Count :

4

Turn On Delay Time :

11 ns

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

Matte Tin (Sn)

Number of Elements :

1

Case Connection :

DRAIN

JESD-609 Code :

e3

Fall Time (Typ) :

49 ns

Published :

2016

Avalanche Energy Rating (Eas) :

550 mJ