IRF644NPBF

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Mfr.Part #
IRF644NPBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 14A TO220AB
Stock
44,857
In Stock :
44,857

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Width :
4.7mm
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
TO-220-3
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Power Dissipation-Max :
150W Tc
Input Capacitance (Ciss) (Max) @ Vds :
1060pF @ 25V
Rise Time :
21ns
Height :
9.01mm
Element Configuration :
Single
Number of Pins :
3
Drain to Source Voltage (Vdss) :
250V
Turn-Off Delay Time :
30 ns
Supplier Device Package :
TO-220AB
Vgs (Max) :
±20V
Weight :
6.000006g
Max Operating Temperature :
175°C
RoHS Status :
ROHS3 Compliant
Drain to Source Breakdown Voltage :
250V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On Max :
240 mΩ
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
240mOhm @ 8.4A, 10V
Input Capacitance :
1.06nF
Min Operating Temperature :
-55°C
Operating Temperature :
-55°C~175°C TJ
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
150W
Number of Channels :
1
Fall Time (Typ) :
17 ns
Drain to Source Resistance :
240mOhm
Turn On Delay Time :
10 ns
Published :
2009
Continuous Drain Current (ID) :
14A
Length :
10.41mm
Gate Charge (Qg) (Max) @ Vgs :
54nC @ 10V
Mounting Type :
Through Hole
Mount :
Through Hole
Datasheets
IRF644NPBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF644NPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, Number of Channels:1, Mounting Type:Through Hole, IRF644NPBF pinout, IRF644NPBF datasheet PDF, IRF644NPBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF644NPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF644NPBF


N-Channel Tube 240mOhm @ 8.4A, 10V ±20V 1060pF @ 25V 54nC @ 10V 250V TO-220-3

IRF644NPBF Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1060pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 14A amps.In this device, the drain-source breakdown voltage is 250V and VGS=250V, so the drain-source breakdown voltage is 250V in this case.It is [30 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 240mOhm.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 250V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF644NPBF Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 240mOhm
a 250V drain to source voltage (Vdss)


IRF644NPBF Applications


There are a lot of Vishay Siliconix
IRF644NPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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