IRF644

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Mfr.Part #
IRF644
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 250V 14A TO220AB
Stock
16,643
In Stock :
16,643

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Height :
9.01mm
Fall Time (Typ) :
49 ns
Operating Temperature :
-55°C~150°C TJ
Rise Time :
24ns
Voltage - Rated DC :
250V
Number of Channels :
1
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
14A Tc
Radiation Hardening :
No
Supplier Device Package :
TO-220AB
Number of Pins :
3
Number of Elements :
1
Power Dissipation-Max :
125W Tc
Width :
4.7mm
Rds On Max :
280 mΩ
Packaging :
Tube
Package / Case :
TO-220-3
Mount :
Through Hole
Continuous Drain Current (ID) :
14A
Drain to Source Voltage (Vdss) :
250V
Vgs (Max) :
±20V
Turn On Delay Time :
11 ns
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
68nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 25V
Drain to Source Resistance :
280mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
125W
Max Operating Temperature :
150°C
Element Configuration :
Single
Drain to Source Breakdown Voltage :
250V
FET Type :
N-Channel
Length :
10.41mm
RoHS Status :
Non-RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance :
1.3nF
Vgs(th) (Max) @ Id :
4V @ 250µA
Min Operating Temperature :
-55°C
Rds On (Max) @ Id, Vgs :
280mOhm @ 8.4A, 10V
Published :
2011
Turn-Off Delay Time :
53 ns
Current Rating :
14A
Weight :
6.000006g
Lead Free :
Lead Free
Datasheets
IRF644
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF644 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, IRF644 pinout, IRF644 datasheet PDF, IRF644 amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF644 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF644


N-Channel Tube 280mOhm @ 8.4A, 10V ±20V 1300pF @ 25V 68nC @ 10V 250V TO-220-3

IRF644 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1300pF @ 25V.This device has a continuous drain current (ID) of [14A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=250V, the drain-source breakdown voltage is 250V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 53 ns.MOSFETs have 280mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IRF644 Features


a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a 250V drain to source voltage (Vdss)


IRF644 Applications


There are a lot of Vishay Siliconix
IRF644 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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