IRF640PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Subcategory :

MOSFETs

Minimum Operating Temperature :

- 55 C

Rad Hardened :

No

Rise Time :

45 ns

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 25 V

Number of Elements :

1

Continuous Drain Current :

18(A)

Power Dissipation :

125(W)

Supplier Device Package :

TO-220AB

Power Dissipation (Max) :

125W (Tc)

Transistor Polarity :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

70 nC @ 10 V

Product Category :

MOSFET

FET Feature :

-

Current - Continuous Drain (Id) @ 25°C :

18A (Tc)

Package Type :

TO-220AB

Packaging :

Tube

Drain to Source Voltage (Vdss) :

200 V

Product Status :

Active

RoHS :

Details

Package :

Tube

Channel Mode :

Enhancement

Configuration :

Single

Number of Channels :

1 Channel

Package / Case :

TO-220-3

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain-Source On-Volt :

200(V)

Product Type :

MOSFET

Type :

Power MOSFET

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Operating Temperature :

-55°C ~ 150°C (TJ)

Pin Count :

3 +Tab

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Series :

-

Manufacturer :

Vishay

Mounting :

Through Hole

FET Type :

N-Channel

Operating Temp Range :

-55C to 150C

Gate-Source Voltage (Max) :

±20(V)

Polarity :

N

Maximum Operating Temperature :

+ 150 C

Operating Temperature Classification :

Military

Brand :

Vishay / Siliconix

Transistor Type :

1 N-Channel

Base Product Number :

IRF640

Mounting Type :

Through Hole