IRF640PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Supplier Device Package :

TO-220AB

Min Operating Temperature :

-55°C

Weight :

6.000006g

Radiation Hardening :

No

Packaging :

Bulk

Number of Pins :

3

Drain to Source Voltage (Vdss) :

200V

Turn On Delay Time :

14 ns

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Voltage - Rated DC :

200V

Drain to Source Resistance :

180mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

FET Type :

N-Channel

Threshold Voltage :

4V

Element Configuration :

Single

Fall Time (Typ) :

36 ns

Number of Elements :

1

Rise Time :

51ns

Height :

9.01mm

Input Capacitance :

1.3nF

Resistance :

180mOhm

Power Dissipation :

125W

Number of Channels :

1

Width :

4.7mm

Max Operating Temperature :

150°C

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

180mOhm @ 11A, 10V

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

200V

Published :

2014

Rds On Max :

180 mΩ

Vgs (Max) :

±20V

Power Dissipation-Max :

125W Tc

Nominal Vgs :

2 V

RoHS Status :

ROHS3 Compliant

Current Rating :

18A

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

REACH SVHC :

Unknown

Package / Case :

TO-220-3

Length :

10.41mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Continuous Drain Current (ID) :

18A

Turn-Off Delay Time :

45 ns