IRF640NSTRLPBF
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- Mfr.Part #
- IRF640NSTRLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 18A D2PAK
- Stock
- 416,186
- In Stock ：
- 416,186
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Number of Elements :
- 1
- Power Dissipation :
- 150W
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Vgs (Max) :
- ±20V
- Termination :
- SMD/SMT
- Dual Supply Voltage :
- 200V
- Nominal Vgs :
- 4 V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Threshold Voltage :
- 4V
- Avalanche Energy Rating (Eas) :
- 247 mJ
- Recovery Time :
- 251 ns
- Rise Time :
- 19ns
- Transistor Element Material :
- SILICON
- Lead Free :
- Contains Lead, Lead Free
- Mounting Type :
- Surface Mount
- Height :
- 5.084mm
- Voltage - Rated DC :
- 200V
- Turn-Off Delay Time :
- 23 ns
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Terminal Form :
- Gull wing
- Length :
- 10.668mm
- Fall Time (Typ) :
- 5.5 ns
- Resistance :
- 150mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1160pF @ 25V
- Width :
- 9.65mm
- Published :
- 2004
- Continuous Drain Current (ID) :
- 18A
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 72A
- Turn On Delay Time :
- 10 ns
- Power Dissipation-Max :
- 150W Tc
- Current Rating :
- 18A
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Drain to Source Breakdown Voltage :
- 200V
- Gate Charge (Qg) (Max) @ Vgs :
- 67nC @ 10V
- Max Junction Temperature (Tj) :
- 175°C
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 11A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Number of Channels :
- 1
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Series :
- HEXFET®
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 12 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Datasheets
- IRF640NSTRLPBF
N-Channel Tape & Reel (TR) 150m Ω @ 11A, 10V ±20V 1160pF @ 25V 67nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF640NSTRLPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 247 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1160pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 18A.With a drain-source breakdown voltage of 200V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 200V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Peak drain current for this device is 72A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
IRF640NSTRLPBF Features
the avalanche energy rating (Eas) is 247 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 72A.
a threshold voltage of 4V
IRF640NSTRLPBF Applications
There are a lot of Infineon Technologies
IRF640NSTRLPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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