IRF640NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

250

Dual Supply Voltage :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Height :

19.8mm

Contact Plating :

Tin

Element Configuration :

Single

Rise Time :

19ns

Width :

4.826mm

Case Connection :

DRAIN

Voltage - Rated DC :

200V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Lead Free :

Contains Lead, Lead Free

Current Rating :

18A

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

247 mJ

Recovery Time :

241 ns

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Number of Channels :

1

Max Junction Temperature (Tj) :

175°C

Number of Pins :

3

Package / Case :

TO-220-3

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Published :

1999

Pulsed Drain Current-Max (IDM) :

72A

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

1160pF @ 25V

Termination :

Through Hole

Fall Time (Typ) :

5.5 ns

Length :

10.668mm

Threshold Voltage :

2V

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Number of Terminations :

3

ECCN Code :

EAR99

Resistance :

150mOhm

Power Dissipation :

150W

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

12 Weeks

Continuous Drain Current (ID) :

18A

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

150W Tc

Turn-Off Delay Time :

23 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

150m Ω @ 11A, 10V

Drain to Source Breakdown Voltage :

200V

Nominal Vgs :

4 V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

REACH SVHC :

No SVHC

FET Type :

N-Channel