IRF640FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Through Hole

Power Dissipation :

40W

Rise Time :

27ns

Packaging :

Tube

Package / Case :

TO-220-3 Full Pack

Pulsed Drain Current-Max (IDM) :

72A

Number of Pins :

3

Current Rating :

18A

Rds On (Max) @ Id, Vgs :

180m Ω @ 9A, 10V

RoHS Status :

ROHS3 Compliant

Pin Count :

3

Vgs (Max) :

±20V

Operating Temperature :

150°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

280 mJ

Series :

MESH OVERLAY™

Transistor Application :

SWITCHING

Mount :

Through Hole

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

18A

Fall Time (Typ) :

25 ns

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA

Case Connection :

Isolated

Element Configuration :

Single

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Base Part Number :

IRF6

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

40W Tc

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

ECCN Code :

EAR99