IRF640

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

27ns

JESD-609 Code :

e3

Lead Free :

Contains Lead

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Series :

MESH OVERLAY™

Power Dissipation :

125W

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Voltage - Rated DC :

200V

Current Rating :

18A

Continuous Drain Current (ID) :

18A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

280 mJ

Transistor Element Material :

SILICON

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Fall Time (Typ) :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

Power Dissipation-Max :

125W Tc

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Number of Terminations :

3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

180m Ω @ 9A, 10V

Reach Compliance Code :

not_compliant

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

Element Configuration :

Single

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Package / Case :

TO-220-3

Pulsed Drain Current-Max (IDM) :

72A

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

200V

JEDEC-95 Code :

TO-220AB

Base Part Number :

IRF6