IRF634STRLPBF
- Mfr.Part #
- IRF634STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 250V
- Stock
- 24,173
- In Stock :
- 24,173
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 32A
- Weight :
- 1.437803g
- Terminal Finish :
- Matte Tin (Sn)
- Number of Elements :
- 1
- Drain to Source Resistance :
- 450mOhm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Turn-Off Delay Time :
- 42 ns
- Operating Mode :
- ENHANCEMENT MODE
- Length :
- 10.67mm
- ECCN Code :
- EAR99
- Width :
- 9.02mm
- Rise Time :
- 21ns
- Number of Terminations :
- 2
- Max Operating Temperature :
- 150°C
- Polarity/Channel Type :
- N-Channel
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Number of Channels :
- 1
- Pbfree Code :
- yes
- Terminal Form :
- Gull wing
- Packaging :
- Tape and Reel (TR)
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 9.6 ns
- Drain to Source Voltage (Vdss) :
- 250V
- Published :
- 2004
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Fall Time (Typ) :
- 19 ns
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- JESD-30 Code :
- R-PSSO-G2
- RoHS Status :
- RoHS Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Height :
- 4.83mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 3.1W
- Continuous Drain Current (ID) :
- 8.1A
- Min Operating Temperature :
- -55°C
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Factory Lead Time :
- 12 Weeks
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Datasheets
- IRF634STRLPBF
Tape & Reel (TR) 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF634STRLPBF Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 300 mJ.This device has a continuous drain current (ID) of [8.1A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.A maximum pulsed drain current of 32A is the maximum peak drain current rated for this device.MOSFETs have 450mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 9.6 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 250V is needed from the drain to the source (Vdss).
IRF634STRLPBF Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 8.1A
the turn-off delay time is 42 ns
based on its rated peak drain current 32A.
single MOSFETs transistor is 450mOhm
a 250V drain to source voltage (Vdss)
IRF634STRLPBF Applications
There are a lot of Vishay Siliconix
IRF634STRLPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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