IRF634S

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Mfr.Part #
IRF634S
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 250V 8.1A D2PAK
Stock
9,060
In Stock :
9,060

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Published :
2016
Number of Channels :
1
Height :
4.83mm
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
770pF @ 25V
Length :
10.67mm
RoHS Status :
Non-RoHS Compliant
Input Capacitance :
770pF
Turn-Off Delay Time :
42 ns
Current Rating :
8.1A
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Vgs(th) (Max) @ Id :
4V @ 250µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
250V
Element Configuration :
Single
Weight :
1.437803g
Fall Time (Typ) :
19 ns
Rds On (Max) @ Id, Vgs :
450mOhm @ 5.1A, 10V
Voltage - Rated DC :
250V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
450mOhm
Width :
9.02mm
Supplier Device Package :
D2PAK
Continuous Drain Current (ID) :
8.1A
Power Dissipation-Max :
3.1W Ta 74W Tc
Operating Temperature :
-55°C~150°C TJ
Turn On Delay Time :
9.6 ns
Rds On Max :
450 mΩ
Min Operating Temperature :
-55°C
Packaging :
Tube
Mount :
Surface Mount
Mounting Type :
Surface Mount
Lead Free :
Contains Lead
Max Operating Temperature :
150°C
Current - Continuous Drain (Id) @ 25°C :
8.1A Tc
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time :
21ns
FET Type :
N-Channel
Datasheets
IRF634S
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF634S from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF634S pinout, IRF634S datasheet PDF, IRF634S amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF634S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF634S


N-Channel Tube 450mOhm @ 5.1A, 10V ±20V 770pF @ 25V 41nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF634S Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 770pF @ 25V.This device conducts a continuous drain current (ID) of 8.1A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 42 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 450mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9.6 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF634S Features


a continuous drain current (ID) of 8.1A
the turn-off delay time is 42 ns
single MOSFETs transistor is 450mOhm
a 250V drain to source voltage (Vdss)


IRF634S Applications


There are a lot of Vishay Siliconix
IRF634S applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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