IRF630NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Packaging :

Tube

Voltage - Rated DC :

200V

Current Rating :

9.3A

Radiation Hardening :

No

Threshold Voltage :

4V

Series :

HEXFET®

FET Type :

N-Channel

Continuous Drain Current (ID) :

9.3A

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Height :

4.83mm

Drain to Source Breakdown Voltage :

200V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Fall Time (Typ) :

15 ns

Resistance :

300mOhm

ECCN Code :

EAR99

Width :

9.65mm

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Case Connection :

DRAIN

Length :

10.67mm

Power Dissipation-Max :

82W Tc

Avalanche Energy Rating (Eas) :

94 mJ

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Power Dissipation :

82W

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

300m Ω @ 5.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Turn-Off Delay Time :

27 ns

Peak Reflow Temperature (Cel) :

260

Published :

1997

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Nominal Vgs :

4 V

Turn On Delay Time :

7.9 ns

Mount :

Surface Mount

Recovery Time :

176 ns

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time :

14ns

Element Configuration :

Single

JESD-609 Code :

e3