IRF630FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

FET Type :

N-Channel

Pbfree Code :

yes

Mount :

Through Hole

Turn On Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Rise Time :

15ns

Package / Case :

TO-220-3 Full Pack

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Pin Count :

3

Drain-source On Resistance-Max :

0.4Ohm

Transistor Application :

SWITCHING

Number of Terminations :

3

ECCN Code :

EAR99

Lead Free :

Lead Free

Element Configuration :

Single

Mounting Type :

Through Hole

Power Dissipation-Max :

30W Tc

Terminal Finish :

Matte Tin (Sn) - annealed

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Transistor Element Material :

SILICON

Case Connection :

Isolated

Number of Pins :

3

Power Dissipation :

30W

Continuous Drain Current (ID) :

9A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

9A

RoHS Status :

ROHS3 Compliant

Series :

MESH OVERLAY™ II

Packaging :

Tube

Operating Temperature :

-65°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Base Part Number :

IRF6

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

200V