IRF630

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

15.75mm

Nominal Vgs :

3 V

Power Dissipation :

75W

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Reverse Recovery Time :

170 ns

Drain to Source Breakdown Voltage :

200V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Dual Supply Voltage :

200V

Voltage - Rated DC :

200V

Gate to Source Voltage (Vgs) :

20V

Resistance :

400mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Additional Feature :

AVALANCHE RATED

Transistor Element Material :

SILICON

Base Part Number :

IRF6

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Element Configuration :

Single

Lead Free :

Lead Free

Threshold Voltage :

3V

Power Dissipation-Max :

75W Tc

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Rise Time :

15ns

Vgs (Max) :

±20V

Weight :

4.535924g

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

3

Current Rating :

9A

Feedback Cap-Max (Crss) :

50 pF

ECCN Code :

EAR99

JESD-609 Code :

e3

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Packaging :

Tube

Lead Pitch :

2.54mm

Continuous Drain Current (ID) :

9A

Turn On Delay Time :

10 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

MESH OVERLAY™ II

Width :

4.6mm

Pin Count :

3

Operating Temperature :

-65°C~150°C TJ

Package / Case :

TO-220-3

Length :

10.4mm

Number of Pins :

3