IRF6218STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

-5 V

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

FET Type :

P-Channel

Number of Elements :

1

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Drain to Source Breakdown Voltage :

-150V

RoHS Status :

ROHS3 Compliant

Length :

10.668mm

Series :

HEXFET®

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

ECCN Code :

EAR99

Rise Time :

70ns

Turn-Off Delay Time :

35 ns

Published :

2004

Case Connection :

DRAIN

Width :

9.65mm

Continuous Drain Current (ID) :

-150A

Lead Free :

Lead Free

Power Dissipation-Max :

250W Tc

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

5V @ 250μA

Radiation Hardening :

No

Turn On Delay Time :

21 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Height :

4.572mm

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

2

Fall Time (Typ) :

30 ns

Factory Lead Time :

14 Weeks

Threshold Voltage :

-5V

Drain to Source Voltage (Vdss) :

150V

Power Dissipation :

250W

Drain Current-Max (Abs) (ID) :

27A

Current - Continuous Drain (Id) @ 25°C :

27A Tc