IRF6218SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

35 ns

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

30 ns

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Radiation Hardening :

No

Series :

HEXFET®

Min Operating Temperature :

-55°C

Drain Current-Max (Abs) (ID) :

27A

Turn On Delay Time :

21 ns

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Continuous Drain Current (ID) :

-150A

FET Type :

P-Channel

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Power Dissipation :

250W

Transistor Application :

SWITCHING

Mount :

Surface Mount

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Published :

2004

JESD-609 Code :

e3

Max Operating Temperature :

175°C

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain to Source Voltage (Vdss) :

150V

Vgs (Max) :

±20V

Rise Time :

70ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Power Dissipation-Max :

250W Tc

Number of Pins :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube