IRF6218PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

2.21nF

Rise Time :

70ns

Rds On Max :

150 mΩ

FET Type :

P-Channel

Min Operating Temperature :

-55°C

Drive Voltage (Max Rds On,Min Rds On) :

10V

Contact Plating :

Tin

Current Rating :

-27A

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Packaging :

Tube

Max Operating Temperature :

175°C

Lead Free :

Lead Free

Mounting Type :

Through Hole

Dual Supply Voltage :

-150V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Continuous Drain Current (ID) :

-27A

Width :

4.69mm

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Height :

15.24mm

Supplier Device Package :

TO-220AB

Radiation Hardening :

No

REACH SVHC :

No SVHC

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Mount :

Through Hole

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-150V

Number of Pins :

3

Published :

2003

Drain to Source Resistance :

150mOhm

Power Dissipation-Max :

250W Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

-5 V

Length :

10.5156mm

Voltage - Rated DC :

-150V

Threshold Voltage :

-5V

Power Dissipation :

250W

Rds On (Max) @ Id, Vgs :

150mOhm @ 16A, 10V

Drain to Source Voltage (Vdss) :

150V

Number of Elements :

1

Fall Time (Typ) :

30 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

35 ns

Series :

HEXFET®

Package / Case :

TO-220-3

Turn On Delay Time :

21 ns