IRF6216TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta

Terminal Form :

Gull wing

Number of Terminations :

8

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Number of Pins :

8

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

240m Ω @ 1.3A, 10V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

18 ns

Fall Time (Typ) :

26 ns

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2005

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Height :

1.75mm

Length :

4.9784mm

Drain to Source Breakdown Voltage :

-150V

Peak Reflow Temperature (Cel) :

260

Width :

3.9878mm

Current - Continuous Drain (Id) @ 25°C :

2.2A Ta

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1280pF @ 25V

Recovery Time :

120 ns

Continuous Drain Current (ID) :

-2.2A

Dual Supply Voltage :

150V

Max Junction Temperature (Tj) :

150°C

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

49nC @ 10V

RoHS Status :

ROHS3 Compliant

Rise Time :

15ns

REACH SVHC :

No SVHC

Nominal Vgs :

5 V

Vgs(th) (Max) @ Id :

5V @ 250μA

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

-5V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Dual

Number of Channels :

1

Resistance :

240mOhm

Turn-Off Delay Time :

33 ns

Factory Lead Time :

14 Weeks

Contact Plating :

Tin

Mounting Type :

Surface Mount

Power Dissipation :

2.5W

Drive Voltage (Max Rds On,Min Rds On) :

10V