IRF6215STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.29Ohm

Published :

1998

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

150V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drain Current-Max (Abs) (ID) :

13A

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

Series :

HEXFET®

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

3.8W Ta 110W Tc

RoHS Status :

Non-RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Number of Terminations :

2

JESD-609 Code :

e3

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

44A

DS Breakdown Voltage-Min :

150V

Avalanche Energy Rating (Eas) :

310 mJ

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99