IRF6215PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Series :

HEXFET®

Current Rating :

-13A

Length :

10.5156mm

Number of Pins :

3

Contact Plating :

Tin

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Nominal Vgs :

-4 V

Turn-Off Delay Time :

53 ns

Radiation Hardening :

No

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

150V

Mount :

Through Hole

Termination :

Through Hole

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Threshold Voltage :

-4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

-13A

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

44A

Number of Elements :

1

Fall Time (Typ) :

37 ns

Width :

4.69mm

FET Type :

P-Channel

Packaging :

Tube

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Transistor Element Material :

SILICON

Dual Supply Voltage :

-150V

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Power Dissipation :

110W

Resistance :

290mOhm

Mounting Type :

Through Hole

Recovery Time :

240 ns

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Drain to Source Breakdown Voltage :

-150V

Number of Terminations :

3

Height :

15.24mm

Gate to Source Voltage (Vgs) :

20V

Lead Pitch :

2.54mm

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

14 ns

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Rise Time :

36ns

Voltage - Rated DC :

-150V

Power Dissipation-Max :

110W Tc

Published :

1998

JEDEC-95 Code :

TO-220AB