IRF620SPBF
- Mfr.Part #
- IRF620SPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.2A D2PAK
- Stock
- 4,211
- In Stock :
- 4,211
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Weight :
- 1.437803g
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On Max :
- 800 mΩ
- Continuous Drain Current (ID) :
- 5.2A
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 19 ns
- Input Capacitance :
- 260pF
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 800mOhm
- Dual Supply Voltage :
- 200V
- Height :
- 4.83mm
- Number of Pins :
- 3
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3.1A, 10V
- Power Dissipation :
- 3W
- Rise Time :
- 22ns
- Length :
- 10.67mm
- Nominal Vgs :
- 4 V
- Vgs (Max) :
- ±20V
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 200V
- Width :
- 9.65mm
- Number of Channels :
- 1
- Supplier Device Package :
- D2PAK
- Factory Lead Time :
- 8 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Resistance :
- 800mOhm
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 13 ns
- Drain to Source Breakdown Voltage :
- 200V
- Element Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3W Ta 50W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 7.2 ns
- Published :
- 2015
- Max Operating Temperature :
- 150°C
- FET Type :
- N-Channel
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Datasheets
- IRF620SPBF
N-Channel Tube 800mOhm @ 3.1A, 10V ±20V 260pF @ 25V 14nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF620SPBF Overview
A device's maximum input capacitance is 260pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 5.2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 800mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 7.2 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 200V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF620SPBF Features
a continuous drain current (ID) of 5.2A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRF620SPBF Applications
There are a lot of Vishay Siliconix
IRF620SPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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