IRF620PBF-BE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

22 ns

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 10 V

Mounting Type :

Through Hole

Brand :

Vishay / Siliconix

Transistor Type :

1 N-Channel

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

5.2A (Tc)

Drain to Source Voltage (Vdss) :

200 V

Manufacturer :

Vishay

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Transistor Polarity :

N-Channel

Package :

Tube

Base Product Number :

IRF620

Rds On (Max) @ Id, Vgs :

800mOhm @ 3.1A, 10V

Minimum Operating Temperature :

- 55 C

Package / Case :

TO-220-3

Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

260 pF @ 25 V

Supplier Device Package :

TO-220AB

Series :

-

Product Type :

MOSFET

Product Status :

Active

Vgs (Max) :

±20V

FET Type :

N-Channel

Mounting Style :

Through Hole

Number of Channels :

1 Channel

Power Dissipation (Max) :

50W (Tc)

Subcategory :

MOSFETs

RoHS :

Details

Maximum Operating Temperature :

+ 150 C

Product Category :

MOSFET