IRF620PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Resistance :

800mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

50W Tc

Power Dissipation :

50W

Width :

4.7mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

7.2 ns

Nominal Vgs :

2 V

REACH SVHC :

Unknown

Number of Elements :

1

Fall Time (Typ) :

13 ns

Current :

52A

Lead Free :

Lead Free

Drain to Source Voltage (Vdss) :

200V

FET Type :

N-Channel

Rise Time :

22ns

Voltage - Rated DC :

250V

Height :

9.01mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Vgs (Max) :

±20V

Current Rating :

5.2A

Radiation Hardening :

No

Turn-Off Delay Time :

19 ns

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Rds On Max :

800 mΩ

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

800mOhm @ 3.1A, 10V

Mounting Type :

Through Hole

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Continuous Drain Current (ID) :

5.2A

Factory Lead Time :

8 Weeks

Threshold Voltage :

2V

Recovery Time :

300 ns

Resistance :

800mOhm

Max Operating Temperature :

150°C

Min Operating Temperature :

-55°C

Input Capacitance :

260pF

Weight :

6.000006g

Supplier Device Package :

TO-220AB

Length :

10.41mm

Drain to Source Breakdown Voltage :

200V

Packaging :

Tube

Published :

2004

Voltage :

200V