IRF614SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Packaging :

Tube

Mount :

Surface Mount

Published :

2014

Rise Time :

7.6ns

Height :

4.83mm

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

2.7A

Number of Elements :

1

Width :

9.65mm

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Element Configuration :

Single

Pbfree Code :

yes

FET Type :

N-Channel

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

250V

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Power Dissipation :

3.1W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.6A, 10V

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Voltage (Vdss) :

250V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Terminal Finish :

Matte Tin (Sn)

Length :

10.67mm

Pin Count :

4

Turn-Off Delay Time :

16 ns

Factory Lead Time :

11 Weeks

Number of Terminations :

2

Terminal Form :

Gull wing

Turn On Delay Time :

7 ns

Weight :

1.437803g

Drain-source On Resistance-Max :

2Ohm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.1W Ta 36W Tc

JESD-30 Code :

R-PSSO-G2

Fall Time (Typ) :

7 ns

Gate to Source Voltage (Vgs) :

20V