IRF614S
- Mfr.Part #
- IRF614S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 2.7A D2PAK
- Stock
- 3,385
- In Stock :
- 3,385
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- Non-RoHS Compliant
- Element Configuration :
- Single
- Turn On Delay Time :
- 7 ns
- Max Operating Temperature :
- 150°C
- Supplier Device Package :
- D2PAK
- Current Rating :
- 2.7A
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 250V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 1.437803g
- Packaging :
- Tube
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 7.6ns
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 2.7A Tc
- Continuous Drain Current (ID) :
- 2.7A
- Number of Pins :
- 3
- Rds On Max :
- 2 Ω
- Lead Free :
- Contains Lead
- Fall Time (Typ) :
- 7 ns
- FET Type :
- N-Channel
- Input Capacitance :
- 140pF
- Height :
- 4.83mm
- Length :
- 10.67mm
- Width :
- 9.65mm
- Drain to Source Resistance :
- 2Ohm
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 2Ohm @ 1.6A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Power Dissipation-Max :
- 3.1W Ta 36W Tc
- Power Dissipation :
- 36W
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 250V
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Turn-Off Delay Time :
- 16 ns
- Drain to Source Breakdown Voltage :
- 250V
- Datasheets
- IRF614S
N-Channel Tube 2Ohm @ 1.6A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 250V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF614S Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 140pF @ 25V.This device conducts a continuous drain current (ID) of 2.7A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 2Ohm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 250V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF614S Features
a continuous drain current (ID) of 2.7A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 16 ns
single MOSFETs transistor is 2Ohm
a 250V drain to source voltage (Vdss)
IRF614S Applications
There are a lot of Vishay Siliconix
IRF614S applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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