IRF5802

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Number of Elements :

1

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Avalanche Energy Rating (Eas) :

9.5 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

ECCN Code :

EAR99

Power Dissipation-Max :

2W Ta

Drain Current-Max (Abs) (ID) :

0.9A

Input Capacitance (Ciss) (Max) @ Vds :

88pF @ 25V

Pulsed Drain Current-Max (IDM) :

7A

Published :

2010

Packaging :

Tube

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

150V

Number of Terminations :

6

DS Breakdown Voltage-Min :

150V

Terminal Position :

Dual

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 540mA, 10V

Vgs (Max) :

±30V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Operating Temperature (Max) :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-G6