IRF5210STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Mounting Type :

Surface Mount

FET Type :

P-Channel

Number of Terminations :

2

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

38A

Avalanche Energy Rating (Eas) :

120 mJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

60m Ω @ 38A, 10V

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Single

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Published :

2005

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

38A Tc

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.06Ohm

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Factory Lead Time :

10 Weeks

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

140A

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

3.1W Ta 170W Tc

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE