IRF520NSTRL

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.8W Ta 48W Tc

Time@Peak Reflow Temperature-Max (s) :

30

Published :

1998

Series :

HEXFET®

Surface Mount :

yes

JESD-609 Code :

e3

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

38A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

9.7A

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

100V

Drain-source On Resistance-Max :

0.2Ohm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Number of Terminations :

2

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Avalanche Energy Rating (Eas) :

91 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY