HGTP7N60B3D

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Mfr.Part #
HGTP7N60B3D
Manufacturer
Harris Corporation
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT, 14A, 600V, N-CHANNEL, TO-2
Stock
27,498
In Stock :
27,498

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Manufacturer :
Harris Corporation
Product Category :
Transistors - IGBTs - Single
Input Type :
Standard
Reverse Recovery Time :
37ns
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 7A
Weight :
1.8g
Packaging :
Tube
Max Power Dissipation :
60W
Collector Emitter Breakdown Voltage :
600V
Current Rating :
14A
Element Configuration :
Single
Gate Charge :
23nC
Test Condition :
480V, 7A, 50 Ω, 15V
Collector Emitter Saturation Voltage :
1.8V
Collector Emitter Voltage (VCEO) :
600V
Lead Free :
Lead Free
Package / Case :
TO-220-3
Td (on/off) @ 25°C :
26ns/130ns
Current - Collector Pulsed (Icm) :
56A
Operating Temperature :
-55°C~150°C TJ
Mount :
Through Hole
Max Collector Current :
14A
Switching Energy :
160μJ (on), 120μJ (off)
Power Dissipation :
60W
Number of Pins :
3
Voltage - Rated DC :
600V
Mounting Type :
Through Hole
Base Part Number :
HGTP7N60
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
RoHS Status :
RoHS Compliant
Datasheets
HGTP7N60B3D
Introducing Transistors - IGBTs - Single Harris Corporation HGTP7N60B3D from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Base Part Number:HGTP7N60, HGTP7N60B3D pinout, HGTP7N60B3D datasheet PDF, HGTP7N60B3D amp .Beyond Transistors - IGBTs - Single Harris Corporation HGTP7N60B3D ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Harris Corporation HGTP7N60B3D


HGTP7N60B3D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

HGTP7N60B3D Description


MOS gated high voltage switching devices like the HGTP7N60B3D combine the greatest features of MOSFETs and bipolar transistors. These devices have a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. At rated current, the substantially lower on-state voltage drop fluctuates only marginally between 25oC and 150oC. TA49190 is the developmental type of the IGBT.



HGTP7N60B3D Features


?Ratio of Short Circuits


?Low Loss Conductivity


?An ti-Parallel Hyperfast Diode



HGTP7N60B3D Applications


Controls for AC and DC motors


energy sources


solenoid controllers


Contactors and relays are two types of contactors.


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