HGTP10N120BN

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

1.2kV

Max Breakdown Voltage :

300V

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 10A

Switching Energy :

320μJ (on), 800μJ (off)

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Turn Off Time-Nom (toff) :

330 ns

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Continuous Collector Current :

35A

Length :

10.67mm

Test Condition :

960V, 10A, 10 Ω, 15V

Case Connection :

COLLECTOR

Voltage - Rated DC :

1.2kV

Radiation Hardening :

No

Pbfree Code :

yes

Gate Charge :

100nC

IGBT Type :

NPT

Transistor Application :

Motor Control

Factory Lead Time :

44 Weeks

Current - Collector Pulsed (Icm) :

80A

Additional Feature :

LOW CONDUCTION LOSS

Max Power Dissipation :

49.2W

Number of Terminations :

3

Td (on/off) @ 25°C :

23ns/165ns

Max Collector Current :

35A

Weight :

1.8g

Turn On Time :

32 ns

Current Rating :

35A

Collector Emitter Saturation Voltage :

2.45V

Number of Elements :

1

Package / Case :

TO-220-3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Power Dissipation :

298W

Voltage - Collector Emitter Breakdown (Max) :

1200V

Collector Emitter Voltage (VCEO) :

1.2kV

Element Configuration :

Single

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Width :

4.83mm

Height :

9.4mm

Mounting Type :

Through Hole