HGTP12N60C3D

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

104W

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Mounting Type :

Through Hole

Gate Charge :

48nC

JESD-609 Code :

e3

Weight :

1.8g

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

Turn-Off Delay Time :

270 ns

Additional Feature :

LOW CONDUCTION LOSS

REACH SVHC :

No SVHC

Current - Collector Pulsed (Icm) :

96A

Reverse Recovery Time :

40 ns

Collector Emitter Breakdown Voltage :

600V

Published :

2011

Mount :

Through Hole

Factory Lead Time :

5 Weeks

Number of Elements :

1

Vce(on) (Max) @ Vge, Ic :

2.2V @ 15V, 15A

Turn Off Time-Nom (toff) :

480 ns

Case Connection :

COLLECTOR

Transistor Application :

Motor Control

Package / Case :

TO-220-3

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

600V

Max Power Dissipation :

104W

HTS Code :

8541.29.00.95

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Polarity :

NPN

Element Configuration :

Single

Collector Emitter Saturation Voltage :

1.65V

Pbfree Code :

yes

Max Collector Current :

24A

Base Part Number :

HGTP12N60

Voltage - Rated DC :

600V

ECCN Code :

EAR99

Number of Terminations :

3

Switching Energy :

380μJ (on), 900μJ (off)

Current Rating :

24A

Lead Free :

Lead Free

Turn On Delay Time :

28 μs

Radiation Hardening :

No

Packaging :

Tube

Turn On Time :

48 ns

Number of Pins :

3