HGTP12N60C3

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Mfr.Part #
HGTP12N60C3
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT 600V 24A 104W TO220AB
Stock
34,649
In Stock :
34,649

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Manufacturer :
onsemi
Product Category :
Transistors - IGBTs - Single
Transistor Element Material :
SILICON
Transistor Application :
Motor Control
Case Connection :
COLLECTOR
Terminal Finish :
Tin (Sn)
Surface Mount :
No
Power - Max :
104W
Base Part Number :
HGTP12N60
Additional Feature :
LOW CONDUCTION LOSS
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
ECCN Code :
EAR99
Packaging :
Tube
Pbfree Code :
yes
Number of Terminations :
3
Polarity/Channel Type :
N-Channel
JESD-609 Code :
e3
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 12A
Reach Compliance Code :
Compliant
Gate Charge :
48nC
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Operating Temperature :
-40°C~150°C TJ
Qualification Status :
Not Qualified
Current - Collector Pulsed (Icm) :
96A
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn On Time :
48 ns
Mounting Type :
Through Hole
HTS Code :
8541.29.00.95
Turn Off Time-Nom (toff) :
480 ns
Voltage - Collector Emitter Breakdown (Max) :
600V
JEDEC-95 Code :
TO-220AB
Current - Collector (Ic) (Max) :
24A
JESD-30 Code :
R-PSFM-T3
Switching Energy :
380μJ (on), 900μJ (off)
Package / Case :
TO-220-3
Input Type :
Standard
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
HGTP12N60C3
Introducing Transistors - IGBTs - Single onsemi HGTP12N60C3 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:HGTP12N60, Number of Terminations:3, Operating Temperature:-40°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, HGTP12N60C3 pinout, HGTP12N60C3 datasheet PDF, HGTP12N60C3 amp .Beyond Transistors - IGBTs - Single onsemi HGTP12N60C3 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi HGTP12N60C3


HGTP12N60C3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

HGTP12N60C3 Description


HGTP12N60C3 MOSFET can be described as a gated, high voltage switching device that blends the top characteristics of MOSFETs with bipolar transistors. These devices feature the higher input impedance that comes from a MOSFET and the lower conduction loss on-state of a bipolar transistor. It is ideal for numerous applications that require high voltage like AC or DC motor control power supplies and relay drivers for solenoids and contactors.


HGTP12N60C3 Features


24A, 600V at Tc = 25°C
600V Switching SOA Capability
Typical Fall Time
Short Circuit Rating
Low Conduction Loss


HGTP12N60C3 Applications


AC and DC motor controls
Power supplies
Drivers for solenoids
Relays
Contactors
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