HGTP12N60A4D
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- Mfr.Part #
- HGTP12N60A4D
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Stock
- 5,097
- In Stock ：
- 5,097
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Breakdown Voltage :
- 600V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 96 ns
- Additional Feature :
- LOW CONDUCTION LOSS
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transistor Application :
- POWER CONTROL
- Factory Lead Time :
- 5 Weeks
- Transistor Element Material :
- SILICON
- Rise Time :
- 8ns
- Reverse Recovery Time :
- 18 ns
- Td (on/off) @ 25°C :
- 17ns/96ns
- Max Power Dissipation :
- 167W
- HTS Code :
- 8541.29.00.95
- Height :
- 9.4mm
- Collector Emitter Voltage (VCEO) :
- 600V
- Mounting Type :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 96A
- REACH SVHC :
- No SVHC
- Turn Off Time-Nom (toff) :
- 180 ns
- Base Part Number :
- HGTP12N60
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Turn On Delay Time :
- 17 ns
- Continuous Collector Current :
- 54A
- Current Rating :
- 54A
- Package / Case :
- TO-220-3
- Voltage - Rated DC :
- 600V
- Switching Energy :
- 55µJ (on), 50µJ (off)
- Gate Charge :
- 78nC
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 167W
- Turn On Time :
- 33 ns
- Case Connection :
- COLLECTOR
- Weight :
- 1.8g
- Collector Emitter Saturation Voltage :
- 2V
- Element Configuration :
- Single
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 12A
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- N-Channel
- Width :
- 4.83mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 54A
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Length :
- 10.67mm
- Input Type :
- Standard
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Test Condition :
- 390V, 12A, 10 Ω, 15V
- Published :
- 2002
- Datasheets
- HGTP12N60A4D
HGTP12N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGTP12N60A4D Description
The HGTP12N60A4D is a 600V N-channel IGBT with an anti-parallel hyperfast diode and anti-parallel hyperfast diode. The MOS gate high voltage switching IGBT family includes this SMPS series. The advantages of MOSFET and bipolar transistors are combined in the IGBT. HGTP12N60A4D has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. For building high efficiency and reliable systems, it provides lower conduction and switching losses. On Semiconductor has a large selection of IGBT devices in several process technologies ranging from 300V to over 1200V. Higher control and repeatability of the top-side structure derive from an optimized production process, leading to tighter specifications and better EMI performance. According to the HGTP12N60A4D datasheet, it is intended for general use and can be used in a variety of situations.
HGTP12N60A4D Features
-
Low Conduction Loss
-
These are Pb?Free Devices
-
200 kHz Operation 390 V, 9A
-
600 V Switching SOA Capability
-
>100 kHz Operation 390 V, 12 A
-
Typical Fall Time 70 ns at TJ = 125°C
-
Temperature Compensating Saber? Model
-
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to
PC Boards”
HGTP12N60A4D Applications
-
UPS
-
Welder
-
Fast switching applications
-
High voltage switching applications
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