HGTP12N60A4D

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 12A

Max Collector Current :

54A

Number of Elements :

1

Length :

10.67mm

Published :

2002

Mount :

Through Hole

Rise Time :

8ns

Turn On Time :

33 ns

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Continuous Collector Current :

54A

Width :

4.83mm

Input Type :

Standard

JESD-609 Code :

e3

Radiation Hardening :

No

Switching Energy :

55µJ (on), 50µJ (off)

Current Rating :

54A

Max Power Dissipation :

167W

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

180 ns

Td (on/off) @ 25°C :

17ns/96ns

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Collector Emitter Saturation Voltage :

2V

Weight :

1.8g

Turn-Off Delay Time :

96 ns

Number of Terminations :

3

Test Condition :

390V, 12A, 10 Ω, 15V

Voltage - Rated DC :

600V

Collector Emitter Voltage (VCEO) :

600V

Pbfree Code :

yes

Base Part Number :

HGTP12N60

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Pulsed (Icm) :

96A

Reverse Recovery Time :

18 ns

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

17 ns

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Collector Emitter Breakdown Voltage :

600V

HTS Code :

8541.29.00.95

ECCN Code :

EAR99

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

3

Power Dissipation :

167W

Gate Charge :

78nC

Height :

9.4mm

Packaging :

Tube

Package / Case :

TO-220-3