HGTP3N60A4

Manufacturer :

Harris Corporation

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin (Sn)

Lead Free :

Lead Free

Gate-Emitter Thr Voltage-Max :

7V

Mounting Type :

Through Hole

HTS Code :

8541.29.00.95

Height :

9.02mm

Gate Charge :

21nC

Test Condition :

390V, 3A, 50 Ω, 15V

Fall Time-Max (tf) :

100ns

Turn On Time :

17.5 ns

Element Configuration :

Single

Additional Feature :

LOW CONDUCTION LOSS

Number of Pins :

3

Collector Emitter Voltage (VCEO) :

600V

Packaging :

Tube

Collector Emitter Saturation Voltage :

2.05V

Turn Off Time-Nom (toff) :

180 ns

Voltage - Rated DC :

600V

Package / Case :

TO-220-3

Mount :

Through Hole

Current Rating :

17A

Weight :

1.8g

Current - Collector Pulsed (Icm) :

40A

Number of Terminations :

3

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

600V

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

70W

JEDEC-95 Code :

TO-220AB

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 3A

ECCN Code :

EAR99

Switching Energy :

37μJ (on), 25μJ (off)

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Radiation Hardening :

No

Length :

10.28mm

Power Dissipation :

70W

Rise Time :

11ns

JESD-609 Code :

e3

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

6ns/73ns

Transistor Application :

POWER CONTROL

Pbfree Code :

yes

Max Collector Current :

17A

Gate-Emitter Voltage-Max :

20V

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Width :

4.57mm

Transistor Element Material :

SILICON