HGTG7N60A4D
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- Mfr.Part #
- HGTG7N60A4D
- Manufacturer
- Harris Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- N-CHANNEL IGBT
- Stock
- 269
- In Stock ：
- 269
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 34A
- Radiation Hardening :
- No
- Packaging :
- Tube
- Number of Terminations :
- 3
- Polarity/Channel Type :
- N-Channel
- Turn Off Time-Nom (toff) :
- 205 ns
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Voltage - Rated DC :
- 600V
- Factory Lead Time :
- 44 Weeks
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Transistor Application :
- POWER CONTROL
- Test Condition :
- 390V, 7A, 25 Ω, 15V
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Turn On Time :
- 17 ns
- Current - Collector Pulsed (Icm) :
- 56A
- Rise Time :
- 11ns
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Gate Charge :
- 37nC
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 7A
- Additional Feature :
- LOW CONDUCTION LOSS
- Max Power Dissipation :
- 125W
- Package / Case :
- TO-247-3
- Td (on/off) @ 25°C :
- 11ns/100ns
- Reverse Recovery Time :
- 22 ns
- Switching Energy :
- 55µJ (on), 60µJ (off)
- Collector Emitter Saturation Voltage :
- 1.9V
- Current Rating :
- 34A
- Collector Emitter Breakdown Voltage :
- 600V
- Input Type :
- Standard
- HTS Code :
- 8541.29.00.95
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 600V
- JESD-609 Code :
- e3
- Weight :
- 6.39g
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 125W
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Datasheets
- HGTG7N60A4D
HGTG7N60A4D datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
HGTG7N60A4D Description
HGTG7N60A4D combines the high input impedance of MOSFET and the low conduction loss of bipolar transistors. This IGBT is very suitable for many high voltage switch applications running at high frequency, in which low conduction loss is very important. The device has been optimized for fast switching applications such as UPS and welding machines.
HGTG7N60A4D Features
14A, 600V @ TC = 110°C
Low Saturation Voltage : V CE(sat) = 1.9 V @ I C = 7A
Typical Fall Time. . . . . . . . . . 75ns at TJ = 125°C
Low Conduction Loss
HGTG7N60A4D Applications
Other Industrial
Uninterruptible Power Supply
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