HGTG40N60B3

Manufacturer :

Harris Corporation

Product Category :

Transistors - IGBTs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

Number of Elements :

1

Transistor Application :

POWER CONTROL

Weight :

6.39g

Factory Lead Time :

44 Weeks

Switching Energy :

1.05mJ (on), 800μJ (off)

Collector Emitter Saturation Voltage :

1.4V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Width :

4.82mm

Current - Collector Pulsed (Icm) :

330A

Collector Emitter Voltage (VCEO) :

600V

Number of Terminations :

3

Length :

15.87mm

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Additional Feature :

LOW CONDUCTION LOSS

Collector Emitter Breakdown Voltage :

600V

Turn-Off Delay Time :

170 ns

Turn On Time :

82 ns

Input Type :

Standard

REACH SVHC :

No SVHC

Turn Off Time-Nom (toff) :

385 ns

Pbfree Code :

yes

Td (on/off) @ 25°C :

47ns/170ns

Power Dissipation :

290W

HTS Code :

8541.29.00.95

Lead Free :

Lead Free

Height :

20.82mm

JESD-609 Code :

e3

Voltage - Rated DC :

600V

Mount :

Through Hole

Element Configuration :

Single

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

47 ns

Test Condition :

480V, 40A, 3 Ω, 15V

Gate Charge :

250nC

Max Breakdown Voltage :

600V

Max Power Dissipation :

290W

ECCN Code :

EAR99

Vce(on) (Max) @ Vge, Ic :

2V @ 15V, 40A

Mounting Type :

Through Hole

Max Collector Current :

70A

Packaging :

Tube

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Current Rating :

70A

Number of Pins :

3