HGTG30N60B3
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- Mfr.Part #
- HGTG30N60B3
- Manufacturer
- Harris Corporation
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- 600 V, NPT IGBT
- Stock
- 27,419
- In Stock ：
- 27,419
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - IGBTs - Single
- Continuous Collector Current :
- 60A
- Collector Emitter Breakdown Voltage :
- 600V
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Gate-Emitter Thr Voltage-Max :
- 6V
- Power Dissipation :
- 208W
- Turn On Time :
- 56 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- HTS Code :
- 8541.29.00.95
- Turn Off Time-Nom (toff) :
- 365 ns
- Gate Charge :
- 170nC
- Pbfree Code :
- yes
- Package / Case :
- TO-247-3
- Length :
- 15.87mm
- Contact Plating :
- Tin
- Gate-Emitter Voltage-Max :
- 20V
- Fall Time-Max (tf) :
- 150ns
- Current - Collector Pulsed (Icm) :
- 220A
- Td (on/off) @ 25°C :
- 36ns/137ns
- Mounting Type :
- Through Hole
- Current Rating :
- 60A
- Factory Lead Time :
- 4 Weeks
- Additional Feature :
- LOW CONDUCTION LOSS
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 600V
- Case Connection :
- COLLECTOR
- Polarity :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 500μJ (on), 680μJ (off)
- Collector Emitter Voltage (VCEO) :
- 600V
- Max Collector Current :
- 60A
- Collector Emitter Saturation Voltage :
- 1.45V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Input Type :
- Standard
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 30A
- Max Power Dissipation :
- 208W
- Voltage - Rated DC :
- 600V
- Mount :
- Through Hole
- Width :
- 4.82mm
- Weight :
- 6.39g
- Test Condition :
- 480V, 30A, 3 Ω, 15V
- Published :
- 2013
- Transistor Application :
- POWER CONTROL
- Base Part Number :
- HGTG30N60
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Height :
- 20.82mm
- Datasheets
- HGTG30N60B3
HGTG30N60B3 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
The HGTG30N60B3 is a PT IGBT combines the best features of high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
HGTG30N60B3 Features
30 A, 600 V, TC = 110°C
Low Saturation Voltage: VCE(SAT) = 1.45 V @ IC = 30 A
Typical Fall Time . . . . . . . . . . . . . 90 ns at TJ = 150°C
Short Circuit Rating
Low Conduction Loss
This Device is Pb?Free
HGTG30N60B3 Applications
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