FDS3890

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Factory Lead Time :

21 Weeks

Power - Max :

900mW

Radiation Hardening :

No

Current :

47A

Avalanche Energy Rating (Eas) :

175 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Threshold Voltage :

2.3V

Height :

1.575mm

Current Rating :

4.7A

Number of Elements :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation :

2W

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin

Length :

4.9mm

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Drain to Source Breakdown Voltage :

80V

Number of Terminations :

8

Fall Time (Typ) :

12 ns

Rds On (Max) @ Id, Vgs :

44m Ω @ 4.7A, 10V

Published :

2001

Time@Peak Reflow Temperature-Max (s) :

30

Voltage - Rated DC :

80V

JESD-609 Code :

e3

Turn On Delay Time :

11 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Rise Time :

8ns

Resistance :

44mOhm

Operating Mode :

ENHANCEMENT MODE

Voltage :

80V

Input Capacitance (Ciss) (Max) @ Vds :

1180pF @ 40V

Mount :

Surface Mount

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

Max Power Dissipation :

2W

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn-Off Delay Time :

26 ns

FET Type :

2 N-Channel (Dual)

Width :

3.9mm

Series :

PowerTrench®

Continuous Drain Current (ID) :

4.7A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V